Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching applications. For relatively short gate-drain distances or ohmic-to-ohmic spacings, source-drain punch-through is suggested to be the limiting breakdown mechanism in either HEMTs under off-state conditions or ohmic-to-ohmic isolation test structures, respectively. The mechanism ultimately limiting the HEMT off-state voltage blocking capability is instead the vertical drain-to-substrate breakdown for long gate-drain spacings. The latter phenomenon is induced, in HEMTs on a low-resistivity p-type substrate like those considered here, by the triggering of a high-field carrier generation mechanism rather than by carrier injection

Direct Measurement of the System-Environment Coupling as a Tool For Understanding Decoherence and Dynamical Decoupling

Decoherence is a major obstacle to any practical implementation of quantum information processing. One of the leading strategies to reduce decoherence is dynamical decoupling --- the use of an external field to average out the effect of the environment. The decoherence rate under any control field can be calculated if the spectrum of the coupling to the environment is known. We present a direct measurement of the bath coupling spectrum in an ensemble of optically trapped ultracold atoms, by applying a spectrally narrow-band control field. The measured spectrum follows a Lorentzian shape at low frequencies, but exhibits non-monotonic features at higher frequencies due to the oscillatory motion of the atoms in the trap. These features agree with our analytical models and numerical Monte-Carlo simulations of the collisional bath. From the inferred bath-coupling spectrum, we predict the performance of well-known dynamical decoupling sequences: CPMG, UDD and CDD. We then apply these sequences in experiment and compare the results to predictions, finding good agreement in the weak-coupling limit. Thus, our work establishes experimentally the validity of the overlap integral formalism, and is an important step towards the implementation of an optimal dynamical decoupling sequence for a given measured bath spectrum.Comment: 9 pages, 6 figure

The 2018 GaN power electronics roadmap

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here